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Krf Excimer Laser Deposition of Titanium from Tici4

Published online by Cambridge University Press:  21 February 2011

R. Izquierdo ,
C. Lavoie  and
M. Meunier
R. Izquierdo
Affiliation:
Ecole Polytechnique de Montréal, Groupe des Couches Minces et Département de Génie Physique, Montréal, Canada
C. Lavoie
Affiliation:
Ecole Polytechnique de Montréal, Groupe des Couches Minces et Département de Génie Physique, Montréal, Canada
M. Meunier
Affiliation:
Ecole Polytechnique de Montréal, Groupe des Couches Minces et Département de Génie Physique, Montréal, Canada
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Abstract

We have investigated the deposition of titanium lines from TiCl4 induced by KrF excimer laser (248 nm). Substrates are primarily LiNbO3, for the possible formation of Ti:LiNbO3 optical waveguides, as well as silicon and glass. Titanium lines contain [Cl] < 2 at% and are typically 200 to 1000 Angstroms thick with a width ranging from 3 to 20 μm. Results suggest that the process is controlled by photochemistry of TiCl4 but it is difficult at this point to assert which of the gas or adsorbed layer is the primary source of thin film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 141
Copyright
Copyright © Materials Research Society 1990

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References

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