Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:04:38.923Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics of the Tial3 Formation From Al/Ti Thin Films

Published online by Cambridge University Press:  10 February 2011

X. Federspiel ,
M. Ignat ,
F. Voiron ,
H. Fujimoto  and
T. Marieb
X. Federspiel
Affiliation:
Ltpcm/Inpg Saint Martin d'Hères France
M. Ignat
Affiliation:
Ltpcm/Inpg Saint Martin d'Hères France
F. Voiron
Affiliation:
Ltpcm/Inpg Saint Martin d'Hères France
H. Fujimoto
Affiliation:
INTEL Components Research, Santa Clara, CA
T. Marieb
Affiliation:
INTEL Components Research, Santa Clara, CA
Get access

Abstract

The interfacial reactions that may occur from the ageing of integrated circuits during operation will change their properties and produce failures. It is crucial to understand the phenomena that controls these reactions and their kinetics.

The object of this work was to establish the role of impurities and grain size on the growth rate of TiAI3 from Al/Ti interfaces. The kinetic study consisted of different annealings followed by electrical measurements. These data were correlated with microstructural analysis and composition evolution from Transmission Electron Microscopy (TEM), Secondary Ions Mass Spectroscopy (SIMS).

The kinetic data were fitted using a combination of classical models (parabolic, Avrami, Aronson) and complemented by a simulation, which accounts for the nucleation frequency and the grain boundary diffusion. The growth simulations were compared to microstructures observations using TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 27
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Federspiel, X., Ignat, M., Voiron, F., Interfacial reactions in multilayers intended for microelectronics devices, MRS Spring Meeting, 1998.Google Scholar
[2] Voiron, F., Ignat, M., Marieb, T., Fujtmoto, H., Nucleation and growth at reactive interface followed by impedance measurements, Mat. Res. Soc. Proc. Vol.500 pp 125–129, 1998.Google Scholar
[3] Tardy, J., TU, K.N., Phys. Rev. B 32, pp2070–2080, 1985.Google Scholar
[4] Barmak, K., Rickman, J.M., Michaelsen, C., Evolution of grain structure in thin film reactions, Journal of electronic materials, Vol.26, No.9, ppl1009–1020, 1997.Google Scholar
[5] Emeric, E., Etude des réactions à l'état solide dans des multicouches A1/Co: application à la formation de films minces quasicristallins, Thèse université d'Aix-Marseille III, 1998.Google Scholar
[6] Besser, P.R., Sanchez, J.E., ALVIS, R., The effect of Si on TiAI3 formation in Ti/Al alloy bilayers, Mat. Res. Soc. Symp. Proc. Vol.335 1995.Google Scholar