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Kinetics of the Luminescence of Isoelectronic Rare-Earth Ions In III-V Semiconductors

Published online by Cambridge University Press:  21 February 2011

H.J. Lozykowski
H.J. Lozykowski*
Affiliation:
Department of Electrical and Computer Engineering, and Condensed Matter & Surface Sciences Program Ohio University Athens, Ohio 45701
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Abstract

In this work we have developed a model for the kinetics of the energy transfer from the host lattice to the localized core excited states of rare earth isoelectronic structured traps (REI-trap). We have derive a set of differential equations for semi-insulating semiconductor governing the kinetics of rare earth luminescence. The numerically simulated rise and decay times of luminescence show a good quantitative agreement with the experimental data obtained for InP:Yb, over a wide range of generation rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 397
Copyright
Copyright © Materials Research Society 1993

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References

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