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Kinetics of the C49 TO C54 Phase Transformation in TiSi2 thin Films on Deep-Sub-Micron Lines

Published online by Cambridge University Press:  15 February 2011

J. A. Kittl ,
D. A. Prinslow ,
P. P Apte  and
M. F. Pas
J. A. Kittl
Affiliation:
[email protected]
D. A. Prinslow
Affiliation:
Semiconductor Process and Device Center, Texas Instruments Inc., Dallas, TX 75243
P. P Apte
Affiliation:
Semiconductor Process and Device Center, Texas Instruments Inc., Dallas, TX 75243
M. F. Pas
Affiliation:
Semiconductor Process and Device Center, Texas Instruments Inc., Dallas, TX 75243
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Abstract

The kinetics of the TiSi2 C49 to C54 phase transformation in thin films on patterned deepsub- micron lines, were studied to obtain the full time, temperature and linewidth dependence of the fraction transformed during rapid thermal annealing. A Johnson-Mehl-Avrami kinetic analysis was performed, obtaining Avrami exponents of 0.8±0.2 for all sub-micron lines and 1. 9±0.2 for a 40 μm side square structure, indicating heterogeneous nucleation followed by one dimensional growth for the narrow lines, and two dimensional growth for the square structure. The activation energy, of 3.9 eV, was independent of linewidth in the sub-micron range. Transformation times increased dramatically for decreasing linewidth, as the linewidth approached the grain size of the starting C49 phase. A kinetic model based on the density of nucleation sites as a function of linewidth and C49 grain size is proposed and shown to fit the data, for samples with two different C49 grain sizes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 269
Copyright
Copyright © Materials Research Society 1996

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