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Kinetics of Silicon Oxide Thin Film Deposition From Silane and Disilane with Nitrous Oxide.

Published online by Cambridge University Press:  22 February 2011

Jonathan D. Chapple-Sokol ,
Carmen J. Giunta  and
Roy G. Gordon
Jonathan D. Chapple-Sokol
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, MA 02138.
Carmen J. Giunta
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, MA 02138.
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, MA 02138.
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Abstract

A mechanistic study of the deposition of silicon oxide films (SiOx, 0 < x ≤2) from silanes with nitrous oxide was performed. The depositions of non-stoichiometric films from silane and stoichiometric silicon dioxide from disilane were dominated by SiH2 generation from the decomposition of the silicon-containing reactant. The depositions of stoichiometric films from silane were found to follow chain reaction kinetics initiated by the homogeneous decomposition of N2O.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 127
Copyright
Copyright © Materials Research Society 1988

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