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Kinetics of Radiative Melting of Si

Published online by Cambridge University Press:  25 February 2011

G. K. Celler ,
L. E. Trimble  and
Lynn O. Wilson
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. E. Trimble
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Lynn O. Wilson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

During radiative melting, a silicon surface breaks up into coexisting solid and liquid regions with spacing dependent on incident flux, thermal parameters, and crystalline properties of the sample. The space-averaged reflectivity becomes a function of the incident photon flux, profoundly affecting the transfer of energy and the rate of melting.

We explain time evolution of the molten surface morphology and present data relating depth of melting to the incident photon flux for bulk Si and Si with buried oxide. The data prove the existence of a steady state transition region in which meltingis only superficial and time-independent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 635
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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