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Kinetics of optically-induced crystallization and structure of Agx(As0.48S0.26Se0.26)100-x chalcogenide films.

Published online by Cambridge University Press:  01 February 2011

Milos Krbal ,
Tomas Wagner ,
Miloslav Frumar ,
Milan Vlcek  and
Petr Bezdicka
Milos Krbal
Affiliation:
[email protected] of PardubiceGeneral and Inorganic ChemistryLegion's sq. 565Pardubice-53210Czech Republic
Tomas Wagner
Affiliation:
[email protected], University of Pardubice, General and Inorganic Chemistry, Legion's sq. 565, Pardubice, -, 53210, Czech Republic
Miloslav Frumar
Affiliation:
[email protected], University of Pardubice, General and Inorganic Chemistry, Legion's sq. 565, Pardubice, -, 53210, Czech Republic
Milan Vlcek
Affiliation:
[email protected], ASCR, Joint laboratory UPa and Institute of Macromolecular Chemistry Prague, Studentska 84, Pardubice, -, 53210, Czech Republic
Petr Bezdicka
Affiliation:
[email protected], ,ASCR,, Institute of Inorganic Chemistry, Rez, -, 25068, Czech Republic
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Abstract

The high density optical and/or thermal, electrical memories based on recording into chalcogenide thin films are currently used in industrial dimension but search for new materials continues due to request of higher recording density and shorter lasers wavelength available. The thin films of amorphous chalcogenides e.g. of Ag-As-S(Se) systems making or ternary use different techniques i.e. optically-induced silver dissolution in the binary As-S or As-S-Se chalcogenides prepared by thermal evaporation or by spin coating techniques were prepared and studied. Ternary Ag-As-S and quarternary Ag-As-S(Se) chalcogenide films were also deposited by direct-pulsed laser deposition. Films with euthectic or stoichiometric compositions were prepared. Optically-induced phase-changes in films, process kinetics and analysis of the structural changes and their potential application are described.

Keywords

laser-induced reactionamorphousoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H06-30-G07-03
Copyright
Copyright © Materials Research Society 2006

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