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Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers

Published online by Cambridge University Press:  03 September 2012

J. C. McCallum
J. C. McCallum*
Affiliation:
Microanalytical Research Centre, School of Physics, University of Melbourne, Parkville, Victoria 3052, Australia, [email protected]
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Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a- Si layers containing uniform As concentration profiles ranging from 1–16.1 × 1019 As.cm-3 were produced by multiple-energy ion implantation and time resolved reflectivi[ty was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v/vi(T) = 1 + N/[No exp(−Λ E/kT)], where vi(T) is the intrinsic SPE rate, N is the dopant concentration and No = 1.2 × 1021 cm-3, ΔE = 0.21 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 119
Copyright
Copyright © Materials Research Society 1997

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References

[1] For a review, see Olson, G. L. and Roth, J. A., in Handbook of Crystal Growth 3, ed. Hurle, D. T. J., Elsevier, Amsterdam, 1994, pp. 255–312.Google Scholar
[2] Walser, R. M. and Jeon, Y. J., Mater. Res. Soc. Symp. Proc. 205, pp. 27–32 (1992) and references therein.Google Scholar
[3] Lu, G. Q., Nygren, E. and Aziz, M. J., J. Appl. Phys. 70, pp. 5323–5345 (1991).Google Scholar
[4] Wautelet, M., Semicond. Sci. Technol. 4, pp. 685–686 (1989).Google Scholar
[5] Roth, J. A., Olson, G. L., Jacobson, D. C. and Poate, J. M., Appl. Phys. Lett. 57, pp. 1340–1342 (1990).Google Scholar
[6] McCallum, J. C., Appl. Phys. Lett. 69, pp. 925–927 (1996).Google Scholar
[7] Jeon, Y. J., Becker, M. F. and Walser, R. M., Mater. Res. Soc. Symp. Proc. 157, pp. 745–750 (1990).Google Scholar