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Kinetics Of Hydrogen Evolution And Crystallization InHydrogenated Amorphous Silicon Films Studied By Thermal Analysis And RamanScattering

Published online by Cambridge University Press:  15 February 2011

Nagarajan Sridhar ,
D. D. L. Chung ,
W. A. Anderson ,
W. Y. Yu ,
L. P. Fu  and
A. Petrou
Nagarajan Sridhar
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
D. D. L. Chung
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
W. A. Anderson
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
W. Y. Yu
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
L. P. Fu
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
A. Petrou
Affiliation:
Center for Electronic and Electro-Optic Materials, State University of New York at Buffalo, NY 14260–4400, and J. Coleman, Plasma Physics Corp., P. O. Box 548, Locust Valley, NY 11650.
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Abstract

We observed the processes of hydrogen evolution and crystallization inhydrogenated Amorphous silicon 0.5–7 μm thick films (deposited by dc glowdischarge on Molybdenum) by differential scanning calorimetry (DSC), Ramanscattering and thermogravimetric analysis (TGA). Investigation was made as afunction of doping, deposition temperature and film thickness. For all thefilms, an endothermic DSC peak was observed at 694 °C (onset). That thispeak was at least partly due to hydrogen evolution was shown by TGA, whichshowed weight loss beginning at 694 °C, and by evolved gas analysis, whichshowed hydrogen evolution at 694 °C. This temperature (658–704 °C) increasedwith increasing heating rate (5–30 °C/min). Doping reduced this temperaturefrom 694 to 625 °C for boron doping and to 675 °C for phosphorous doping.Hydrogen evolution kinetics and FTIR results suggest that thesilicon-hydrogen bonding in the intrinsic film was a mixture of SiH andS1H2, and was predominantly SiH in the phosphorous doped films and SiH2 in the boron doped films. Crystallization was independentof silicon-hydrogen bonding in the as-deposited Amorphous silicon film. Itwas bulk (not interface) induced. No exothermic DSC peak accompanied thecrystallization. The film deposition temperature had little effect on theDSC result, but crystallization was enhanced by a higher depositiontemperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 713
Copyright
Copyright © Materials Research Society 1994

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References

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