Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T17:43:53.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

Published online by Cambridge University Press:  21 February 2011

Masao Isomura  and
Sigurd Wagner
Masao Isomura
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
Get access

Abstract

We report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Park, H.R., Liu, J.Z. and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989).CrossRefGoogle Scholar
2. Isomura, M., Xu, X. and Wagner, S., Solar Cells 30, 177 (1991).CrossRefGoogle Scholar
3. Santos, P.V., Jackson, W.B. and Street, R.A., Amer. Inst. Phys. Conf. Proc. 234, 51 (1991).Google Scholar
4. Yang, L., Chen, L. and Catalano, A., Amer. Inst. Phys. Conf. Proc. 234, 273 (1991).Google Scholar
5. Grimbergen, M., Benatar, L.E., Fahrenbruch, A., Lopez-Otero, A., Redfield, D. and Bube, R.H., Amer. Inst. Phys. Conf. Proc. 234, 138 (1991).Google Scholar
6. Stutzmann, M., Nunnenkamp, J., Brandt, M.S., Asano, A. and Rossi, M.C., J. Non-Cryst. Solids 137&138, 211 (1991).Google Scholar
7. Ohagi, H., Nakata, J., Miyanishi, A., Imao, S., Jeong, M., Shirafuji, J., Fujibayashi, K. and Inuishi, Y., Jpn. J. Appl. Phys. 27, 12, 2245 (1988).CrossRefGoogle Scholar
8. Ohsawa, M., Hama, T., Akasaka, T., Sakai, H., Ishida, S. and Uchida, Y., J. Non-Cryst. Solids 97&98.91 (1987).Google Scholar
9. Redfield, D., Appl. Phys. Lett. 52, 492 (1988).CrossRefGoogle Scholar
10. Redfield, D. and Bube, R.H., Appl. Phys. Lett. 54, 1037 (1989).CrossRefGoogle Scholar
11. Hata, N., Wagner, S., Roca i Cabarrocas, P. and Favre, M., Appl. Phys. Lett. 56, 2448 (1990).CrossRefGoogle Scholar
12. Hata, N. and Wagner, S., Amer. Inst. Phys. Conf. Proc. 234, 72 (1991).Google Scholar
13. Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B 32, 23 (1985).CrossRefGoogle Scholar
14. Tsuda, S., Takahama, T., Isomura, M., Tarui, H., Nakashima, Y., Hishikawa, Y., Nakamura, N., Matsuoka, T., Nishiwaki, H., Nakano, S., Ohnishi, M. and Kuwano, Y., Jpn. J. Appl. Phys. 26, 1, 33 (1987).CrossRefGoogle Scholar
15. Vanecek, M., Kocka, J., Stuchlik, J., Kosicek, Z., Stika, O. and Triska, A., Solar Energy Materials 8, 411 (1983).CrossRefGoogle Scholar
16. Smith, Z.E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S. and Chu, T.L., Appl. Phys. Lett. 50, 1521 (1987).CrossRefGoogle Scholar
17. Wang, N.W., Xu, X. and Wagner, S., Amer. Inst. Phys. Conf. Proc. 234, 186 (1991).Google Scholar
18. Wyrsch, N., Finger, F., McMahon, T.J. and Vanecek, M., J. Non-Cryst. Solids 137&138, 347 (1991).CrossRefGoogle Scholar
19. Isomura, M. and Wagner, S., Amer. Inst. Phys. Conf. Proc. 234, 106 (1991).Google Scholar
20. Isomura, M., Hata, N. and Wagner, S., Mat. Res. Soc. Symp. Proc. 219, 27 (1991).CrossRefGoogle Scholar
21. Jackson, W.B., Phil. Mag. Lett. 59, 108 (1989).CrossRefGoogle Scholar
22. Kakalios, J., Street, R.A. and Jackson, W.B., Phys. Rev. Lett. 59, 9, 1037 (1987).CrossRefGoogle Scholar
23. Jackson, W.B. and Kakalios, J., Phys. Rev. B 37, 1020 (1988).CrossRefGoogle Scholar
24. Street, R.A., Tsai, C.C., Kakalios, J. and Jackson, W.B., Phil. Mag. B 56, 305 (1987).CrossRefGoogle Scholar
25. Beyer, W., Herion, J. and Wagner, H., Proc. 4th International PVSEC, Sydney, Australia, 255 (1989).Google Scholar
26. Santos, P.V., Doland, C., Johnson, N.M. and Street, R.A., Proc. J. Non-Cryst. Solids 137&138, 33 (1991).CrossRefGoogle Scholar