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Kinetics of Diamond-Like Film Growth Using Filament-Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

G. Gorsuch ,
Y. Jin ,
N. K. Ingle ,
T. J. Mountziarisi ,
W.-Y. Yu  and
A. Petrou
G. Gorsuch
Affiliation:
Departments of Chemical Engineering State University of New York, Buffalo, NY 14260
Y. Jin
Affiliation:
Departments of Chemical Engineering State University of New York, Buffalo, NY 14260
N. K. Ingle
Affiliation:
Departments of Chemical Engineering State University of New York, Buffalo, NY 14260
T. J. Mountziarisi
Affiliation:
Departments of Chemical Engineering State University of New York, Buffalo, NY 14260
W.-Y. Yu
Affiliation:
Physics Center for Electronic and Electro-optic Materials State University of New York, Buffalo, NY 14260.
A. Petrou
Affiliation:
Physics Center for Electronic and Electro-optic Materials State University of New York, Buffalo, NY 14260.
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Abstract

A detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The model includes both gas-phase and surface reactions. The surface kinetics include adsorption of CH3· and H·, abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp3) and graphitic carbon (sp2) growth. It is postulated that adsorbed CH2· species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. Diamond-like films were deposited on preseeded Si substrates in such a reactor at a pressure of 26 Torr, inlet gas composition ranging from 0.5% to 1.5% methane in hydrogen and substrate temperatures ranging from 600 to 950°C. The best films were obtained at low methane concentrations and substrate temperature of 700°C. The films were characterized using Scanning Electron Microscopy (SEM) and Raman spectroscopy. Observations from our experiments and growth rate data from similar experiments reported in the literature [1] were used to estimate unknown kinetic parameters of surface reactions. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 151
Copyright
Copyright © Materials Research Society 1995

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Footnotes

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Author to whom correspondence should be addressed.

References

[1] Kondoh, E., Ohta, T., Mitomo, T., and Ohtsuka, K., Appl. Phys. Lett., 59(4), 488 (1991); J. Appl. Phys., 72(2), 705 (1992); J. Appl. Phys., 73(6), 3041 (1993).10.1063/1.105417Google Scholar
[2] Angus, J.C. and Hayman, C.C., Science, 241, 913 (1988);10.1126/science.241.4868.913Google Scholar
Angus, J.C., Wang, Y. and Sunkara, M., Annu. Rev. Mater. Sci., 21, 221 (1991).10.1146/annurev.ms.21.080191.001253Google Scholar
[3] Yarbrough, W.A. and Messier, R., Science, 247,688 (1990).10.1126/science.247.4943.688Google Scholar
[4] Celii, F.G. and Butler, J.E., Annu. Rev. Phys. Chem., 42, 643 (1991).10.1146/annurev.pc.42.100191.003235Google Scholar
[5] Geis, M.G. and Angus, J.C., Scientific American, p. 84, October (1992).Google Scholar
[6] Celii, F.G., Pehrsson, P.E., Wang, H.-T. and Butler, J.E., Appl. Phys. Lett., 52, 2043 (1988).10.1063/1.99575Google Scholar
[7] Harris, S.J. and Weiner, A.M., J. Appl. Phys., 67(10), 6520 (1990).10.1063/1.345128Google Scholar
[8] Wu, C.-H., Tamor, M.A., Potter, T.J. and Kaiser, E.W., J. Appl. Phys., 68(9), 4825 (1990).10.1063/1.346141Google Scholar
[9] Harris, S.J., J. Appl. Phys., 65(8), 3044 (1989).10.1063/1.342696Google Scholar
[10] Frenklach, M., J. Appl. Phys., 65(12), 5142 (1989).10.1063/1.343193Google Scholar
[11] Huang, D. and Frenklach, M., J. Phys. Chem., 96(4), 1868 (1992);10.1021/j100183a065Google Scholar
Skokov, S., Weiner, B. and Frenklach, M., J. Phys. Chem., 98, 8 (1994).10.1021/j100052a003Google Scholar
[12] Goodwin, D.G. and Cavillet, G.G., J. Appl. Phys., 68(12), 6393 (1990).10.1063/1.346858Google Scholar
[13] Evans, G. H. and Greif, R., Num. Heat Transfer, 14, 373 (1988).Google Scholar
[14] Kondratiev, V. N., Rate Constants of Gas Phase Reactions, NBS, Washington, D.C. (1972).Google Scholar
[15] Tsang, W. and Hampson, R. F., J. Phys. Chem. Ref. Data, 15(3), 1087 (1986).10.1063/1.555759Google Scholar
[16] Hamza, A. V., Kubiak, G. D., Stullen, R. H., Surf. Sci., 237, 35 (1990).10.1016/0039-6028(90)90517-CGoogle Scholar
[17] Buchan, N.I., Kuech, T.F., Scilla, G., Cardone, F. and Potemski, R., J. Electron. Mater., 219, 277 (1990).10.1007/BF02733819Google Scholar
[18] Gorsuch, G., Jin, Y., Ingle, N.K., Mountziaris, T.J., Yu, W.-Y. and Petrou, A., manuscript in preparation.Google Scholar