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The Kinetics of Damage Removal Metastable Carrier Concentration Relaxation and Secondary Defect Evolution During RTA

Published online by Cambridge University Press:  26 February 2011

Xu Ii ,
Tsien Peihsin  and
Li Zhljan
Xu Ii
Affiliation:
Tsinghna University, Institute of Microelectronics, Beijing, The People's Republic of China
Tsien Peihsin
Affiliation:
Tsinghna University, Institute of Microelectronics, Beijing, The People's Republic of China
Li Zhljan
Affiliation:
Tsinghna University, Institute of Microelectronics, Beijing, The People's Republic of China
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Abstract

The kinetics of damage removal, metastable carrier concentration relaxation and secondary defect evolution in As+-implanted and rapidly annealed silicon was studied m detail. It was found that these processes are characterized by different activation energies. There is a critical temperature Tc for RTA. Only when the annealing temperature is higher than Tc, with suitable time duration can the RTA advantages be fully exloited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 683
Copyright
Copyright © Materials Research Society 1988

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References

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