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Kinetics of Chemical Vapor Deposition of Copper from (β-diketonate)CuL Precursors

Published online by Cambridge University Press:  25 February 2011

Ajay Jain ,
K. M. Chi ,
T. T. Kodas  and
M. J. Hampden-Smith
Ajay Jain
Affiliation:
Chemical Engineering Department, University of New Mexico, Albuquerque, NM 87131
K. M. Chi
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131
T. T. Kodas
Affiliation:
Chemical Engineering Department, University of New Mexico, Albuquerque, NM 87131
M. J. Hampden-Smith
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131
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Abstract

The reaction kinetics of (hfac)CuL were examined in a warm-wall differential reactor. The data are consistent with neutral ligand L dissociation as rate limiting for (hfac)CuVTMS. A strong dependence of film resistivity on (hfac)CuVTMS pressure was observed. Selectivity for tungsten (W) surfaces in the presence of PECVD SiO2 was not observed for (hfac)CuVTMS under the conditions employed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 113
Copyright
Copyright © Materials Research Society 1992

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References

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