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Kinetics and Microstructure of Transiently Annealed Implanted Polycrystalline Silicon Layers

Published online by Cambridge University Press:  25 February 2011

J.M.C. England ,
P.J. Timans ,
R.A. Mcmahon ,
H. Ahmed ,
C. Hill ,
P.D. Augustus  and
D.R. Boys
J.M.C. England
Affiliation:
Microelectronics Research Laboratory, Physics Department, Cambridge University, Cambridge Science Park, Cambridge CB4 4FW, UK.
P.J. Timans
Affiliation:
Microelectronics Research Laboratory, Physics Department, Cambridge University, Cambridge Science Park, Cambridge CB4 4FW, UK.
R.A. Mcmahon
Affiliation:
Microelectronics Research Laboratory, Physics Department, Cambridge University, Cambridge Science Park, Cambridge CB4 4FW, UK.
H. Ahmed
Affiliation:
Microelectronics Research Laboratory, Physics Department, Cambridge University, Cambridge Science Park, Cambridge CB4 4FW, UK.
C. Hill
Affiliation:
Microelectronics Research Laboratory, Physics Department, Cambridge University, Cambridge Science Park, Cambridge CB4 4FW, UK.
P.D. Augustus
Affiliation:
Microelectronics Research Laboratory, Physics Department, Cambridge University, Cambridge Science Park, Cambridge CB4 4FW, UK.
D.R. Boys
Affiliation:
Plessey Research, Caswell, Northants NN12 8EQ, UK.
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Abstract

Microstructural changes occurring during the early stages of rapid thermal annealing of polycrystalline silicon bipolar emitters crucially affect the final dopant distribution and hence the performance of these devices. The first stage of annealing is epitaxial regrowth in the solid phase of the layer amorphised by the implantation. In-situ studies using time-resolved reflectivity measurements, combined with cross-sectional transmission electron microscopy of partly annealed structures, have determined the effects of initial grain size, annealing temperature and amorphising species (Si or As) on the rate of regrowth and the microstructural changes which occur during annealing. As the grain size is reduced, the regrowth rate decreases and the interface roughness increases. Arsenic implantation alters the rate of regrowth in such a manner as to produce a smoother interface than that in silicon implanted material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 647
Copyright
Copyright © Materials Research Society 1990

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References

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