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The Kinetics and Microstructure of Ion Beam Induced Crystallisation of Silicon

Published online by Cambridge University Press:  25 February 2011

J.S. Williams ,
W.L. Brown ,
R. G. Elliman ,
R. V. Knoell ,
D.M. Maher  and
T.E. Seidel
J.S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
W.L. Brown
Affiliation:
A.T. & T. Bell Laboratories, Murray Hill, N.J. 07174, USA
R. G. Elliman
Affiliation:
CSIRO Division of Chemical Physics, Clayton 3168, Australia
R. V. Knoell
Affiliation:
A.T. & T. Bell Laboratories, Murray Hill, N.J. 07174, USA
D.M. Maher
Affiliation:
A.T. & T. Bell Laboratories, Murray Hill, N.J. 07174, USA
T.E. Seidel
Affiliation:
J.C. Shumacher Co., Oceanside, Ca, 92054, U.S.A.
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Abstract

This paper reviews recent detailed investigations into the crystal growth kinetics and the microstructure of ion-beam-stimulated epitaxial crystallisation of silicon. Beam-induced crystallisation at temperatures between 200-400°C is found to be characterised by an activation energy of 0.24eV. Furthermore, in this temperature regime, crystal growth on (100) silicon is found to be free of extended defects except for a sharp hand of dislocation loops centred about the range of the ions employed to stimulate crystallisation. A higher temperature regime (>400°C) is observed in which the growth kinetics are less well defined but appear to be associated with an apparent activation energy of >0.5eV. In this regime, extended defects are observed to extend from the ion range to the surface. Results are presented which strongly suggest that nuclear energy deposition precisely at the amorphous-crystalline interface is responsible for crystallisation under ion irradiation. It is argued that the major fraction (2.4eV) of the thermal-only activation energy for epitaxial crystallisation of silicon is likely to be associated with the formation of nucleation sites for growth, a step which is achieved athermally under ion irradiation. In addition, the growth rate per unit ion fluence is found to be independent of substrate orientation at temperatures <450°C and independent of doping concentration for temperatures <400°C. These results are consistent with our proposed model for beam-induced crystallisation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 79
Copyright
Copyright © Materials Research Society 1985

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References

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