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Kinetic Studies of Nanoscale Crystallization in Electronic Materials

Published online by Cambridge University Press:  15 February 2011

C. Hayzelden  and
J. L. Batstone
C. Hayzelden
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138 Now at UltraTest International, Inc., MicroLabs Analysis Division, San Jose, CA 95131
J. L. Batstone
Affiliation:
IBM T. J. Watson Research Center, P.O. Box 704, Yorktown Heights, NY 10598
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Abstract

We report a kinetic analysis of low-temperature NiSi2-mediated crystallization of amorphous Si by in situ transmission electron microscopy. The initiation of crystallization by formation of crystalline Si on buried NiSi2 precipitates is shown to have an activation energy of 2.8±0.7eV. Crystallization of the amorphous Si via migrating precipitates of NiSi2 occurs with an activation energy of 2.0±0.2eV. The significance of these activation energies is discussed in terms of possible atomistic mechanisms of crystalline Si initiation and subsequent growth. Amorphous Si is reported to crystallize at temperatures as low as 450°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 73
Copyright
Copyright © Materials Research Society 1996

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