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Kinetic Studies of CdS Formation for a Better Understanding of Chemical Buffer Layer Deposition
Published online by Cambridge University Press: 31 January 2011
Abstract
CdS is an important part of CIGS-based photovoltaics as a buffer layer between the absorber and the window layer. Chemical Bath Deposition (CBD) is the most common way of depositing CdS. Due to the nature of the CBD process CdS forms not only on the absorber layer surface but also in the bulk solution. In order to control the deposition of CdS at the surface and to avoidCdS formation in the bulk solution the kinetics of these reactions must be understood. In this work we study the formation of CdS in the chemical bath by using in situ spectroscopic extinction measurements. By monitoring the absorbance of the solution we are able to observe the bulk phase reaction (chemical formation of CdS in solution). Deposition of CdS (growth of the CdS layer at the surface) is investigated by measuring the CdS layer thickness after the reaction. The kinetics of both reactions were investigated by a systematic variation of temperature, initial reactant concentration, Reynold number as well as time. Finally the results of our study suggest a model of growth behaviour based on molecule-by-molecule deposition, which explains especially the dependency on temperature and hydrodynamics.
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- Copyright © Materials Research Society 2009
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