Article contents
Kinetic Modeling and Measurement of Active Species Distributions During Dry Etching
Published online by Cambridge University Press: 28 February 2011
Abstract
A simple kinetic dry etching model accounting for generation, loss, and transport of the reactive and by-product species is developed.To demonstrate and evaluate the model, the etching of silicon using SF6+O2+Ar in the plasma etch mode is investigated.
- Type
- Articles
- Information
- Copyright
- Copyright © Materials Research Society 1986
References
- 2
- Cited by