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Kinetic Model for Layer - by - Layer Homoepitaxial Growth

Published online by Cambridge University Press:  10 February 2011

V. I. Trofimov ,
V. G. Mokerov  and
A. G. Shumyankov
V. I. Trofimov
Affiliation:
Institute of Radio Engineering & Electronics of RAS Mokhovaya str., 11, Moscow 103907, Russia, FAX: 7(095) 203 8414
V. G. Mokerov
Affiliation:
Institute of Radio Engineering & Electronics of RAS Mokhovaya str., 11, Moscow 103907, Russia, FAX: 7(095) 203 8414
A. G. Shumyankov
Affiliation:
Institute of Radio Engineering & Electronics of RAS Mokhovaya str., 11, Moscow 103907, Russia, FAX: 7(095) 203 8414
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Abstract

A new kinetic model for homoepitaxial growth on a singular surface is presented. The model combines the familiar rate equations approach and the concept of a feeding zone that allows connection between the growth processes occuring in neighbouring monolayers. The model involves the irreversible 2D nucleation, growth and coalescence of islands in each growing monolayer and consists of an infinite set of coupled rate equations for the adatom and island densities and coverage in successive monolayers. The temporal evolution of the surface morphology (rms roughness and RHEED intensity) is studied with this model. It is shown that the growth mode is fully determined by a single dimensionless parameter μ = D/J where D and J are the normalized surface diffusion coefficient and deposition flux, respectively. There exist five regions of μ corresponding the different growth regimes varying from smooth 2D layer-by-layer growth at sufficiently high values of μ (>108) to very rough Poisson-like random deposition growth at μ <10−4. The extension of the model to the case of heteroepitaxy is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

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References

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