Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:32:11.211Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetic Exchange Vs. Room Temperature Ferromagnetism in Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  17 March 2011

J. Blinowski ,
P. Kacman  and
T. Dietl
J. Blinowski
Affiliation:
Institute of Theoretical Physics, Warsaw University, ul. Hoża 69, PL-00-681 Warszaw a, Poland
P. Kacman
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668Warszawa, Poland
T. Dietl
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668Warszawa, Poland
Get access

Abstract

Guided by the internal-reference rule and the known band o sets in - and - diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as the cases for which the doping by shallow impurities may lead to the ferromagnetism driven by the double exchange. e consider the dependence of kinetic exchange on the p-d hybridization, on the electronic con gurations of the magnetic ions, and on the energies of the charge transfer betw een the valence band of host materials and the magnetic ions. n the case of n-based - compounds, the doping by acceptors is necessary for the hole-induced ferromagnetism. he latter is, how ever, possible without any doping for some of Mn-, Fe- or Co-based - magnetic semiconductors. n nitrides with Fe or Co carrier-induced ferromagnetism with TC > 300 is expected in the presence of acceptor doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F6.9
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ohno, H., Munekata, H., Penney, T., Molnar, S. von and Chang, L.L., Phys. Rev.Lett. 68, 2664 (1992).Google Scholar
[2] Ohno, H. et al. , Appl. Phys. Lett. 69, 363 (1996).Google Scholar
[3] Esch, A. Van, Bockstal, L. Van et al. , Phys. Rev. B 56, 13103 (1997).Google Scholar
[4] Matsukura, F., Ohno, H., Shen, A. and Sugawara, Y.,Phys. Rev.B 57, R2037 (1998).Google Scholar
[5] Haury, A. et al. , Phys. Rev. Lett. 79, 511 (1997).Google Scholar
[6] Ferrand, D. et al. , Phys. Rev. B 63, 085201 (2001).Google Scholar
[7] Ohno, H., J. Magn. Magn. Mater. 200, 110 (1999).Google Scholar
[8] Dietl, T., Physica E 10, 120 (2001).Google Scholar
[9] Ohno, Y. et al. , Nature 402 790 (1999).Google Scholar
[10] Ohno, H. et al. , Nature 408, 944(2000).Google Scholar
[11] Tanaka, M. and Higo, Y., Phys. Rev. Lett. 87, 026602 (2001).Google Scholar
[12] Dietl, T., Ohno, H., Matsukura, F., Cibert, J. and Ferrand, D., Science 287, 1019 (2000); T. Dietl, H. Ohno and F. Matsukura, Phys. Rev. B 63, 195205 (2001).Google Scholar
[13] Dietle, T.-print: http://arXiv.org/abs/cond-mat/0201282 and references therein; Y.D. Park, et al., Appl. Phys. L ett78, 2739 (2001).Google Scholar
[14] Dietl, T., Haury, A., and d'Aubigné, Y. Merle, Phys. Rev. B 55, R3347 (1997).Google Scholar
[15] Andrearczyk, T. et al. , Proceedings25th ICPS, Osaka, Japan, 2000, eds. Miura, N. and Ando, T. (Spriger, Berlin, 2001) p. 235.Google Scholar
[16] Kacman, P.,Semicon. Sci. Technol. 16, R25 (2001).Google Scholar
[17] Kossut, J. and Dobrowolski, W., inHandbook of Magnetic Materials, Vol. 7, ed. Buschow, K.H.J. (Elsevier, Amsterdam 1993), p. 231; T. Dietl, in Handbook on Semiconductors, Vol. 3B, ed. T.S. Moss (Elsevier, Amsterdam 1994), p. 1251.Google Scholar
[18] Bhattacharjee, A.K. and Guillaume, C. Benoit à la, Solid State Commun. 113, 17 (2000).Google Scholar
[19] Szczytko, J., Bardyszewski, W. and Twardowski, A., Phys. R ev. B64, 075306 (2001).Google Scholar
[20] Sanvito, S., Ordejon, P. and Hill, N.A., Phys. R ev.B 63, 165206 (2001).Google Scholar
[21] Okabayashi, J. et al. , Phys. Rev. B 58, R4211 (1998).Google Scholar
[22] Caldas, M. J., Fuzzio, A. and Zunger, A. Appl. Phys. Lett 45, 671 (1984).Google Scholar
[23] Langer, J.M., Delerue, C., Lannoo, M. and Heinrich, H., Phys. Rev.B 38, 7723 (1988).Google Scholar
[24] Vogl, P. and Baranowski, J.M., Acta Phys. Polon. A 67, 133 (1985).Google Scholar
[25] Zunger, A., in: Solid State Phys., vol. 39, eds. Ehrenreich, H. and Turnbull, D. (Academic Press, New York, 1986), p. 275.Google Scholar
[26] Sokolov, V.I.,Fiz. Tverd. Tela 29, 1848 (1987).Google Scholar
[27] Heiman, D. et al. , Mater. Res. Soc.Symp. Proc., Vol. 161, (1990), p.479.Google Scholar
[28] Sze, S.M. Physics of Semiconductor Devices (John Wiley and Sons, NY 1981), p. 849.Google Scholar
[29] Wei, S-H. and Zunger, A., Appl. Phys. Lett. 72, 2011 (1998).Google Scholar
[30] Vurgaftman, I., Meyer, J.R. and Ram-Mohan, L.R., J. Appl. Phys. 89, 5815(2001).Google Scholar
[31] Kreissl, J., Ulrici, W., El-Metoui, M., Vasson, A.-M., Vasson, A. and Gavaix, A., Phys. Rev.B 54, 10508 (1996).Google Scholar
[32] Ueda, K., Tabata, H. and Kawai, T., Appl. Phys. Lett. 79, 988 (2001).Google Scholar
[33] Saeki, H., Tabata, H. and Kawai, T.,Solid State Commun. 120, 439 (2001).Google Scholar
[34] Blinowski, J., Kacman, P. and Majewski, J.A., J. Cryst. Growth 159, 972 (1996).Google Scholar
[35] Guillaume, C. Benoit à la, Scalbert, D. and Dietl, T., Phys. Rev. B46, 9853 (1992).Google Scholar
[36] Dietl, T., Matsukura, F. and Ohno, H., e-print: http://arXiv.org/abs/cond-mat/0109245.Google Scholar
[37] Glód, P., Dietl, T., Fromherz, T., Bauer, G. and Miotkowski, I. Phys. Rev.B 49, 7797 (1994).Google Scholar
[38] Ohldag, H. et al. , Appl. Phys. Lett. 76, 2928 (2000).Google Scholar
[39] Park, J.H., Kwon, S.K. and Min, B.I., Physica B 281&282, 703 (2000).Google Scholar
[40] Akai, H., Phys. Rev. Lett. 81, 3002 (1998).Google Scholar
[41] Blinowski, J. and Kacman, P., Phys. Rev.B 46, 12298 (1992).Google Scholar
[42] Nambu, T. et al. , unpublished.Google Scholar
[43] Blinowski, J. and Kacman, P., ActaPhys. Polon. A 100, 343 (2001).Google Scholar
[44] Akinaga, H. et al. , Appl. Phys. Lett. 77, 4377 (2000).Google Scholar
[45] Zając, M. et al. , Appl. Phys. Lett. 79, 2432 (2001).Google Scholar
[46] Wolos', A., Palczewska, M., Kamińska, M. and Twardowski, A., unpublished.Google Scholar
[47] Theodoropolpu, N. et al. , Appl. Phys. Lett. 78, 3475 (2001).Google Scholar
[48] Reed, M. L. et al. . Appl. Phys. Lett. 79, 3473 (2001).Google Scholar
[49] Sonoda, S., Shimizu, S., Sasaki, T., Yamamoto, Y. and Hori, H., e-print: http://arXiv.org/abs/cond-mat/0108159.Google Scholar