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The Kinetic Effects of Layering Sequence of Al-Ge-Ni Ohmic Contact Components on (001) GaAs

Published online by Cambridge University Press:  25 February 2011

W. V. Lampert ,
T. W. Haas  and
Paul H. Holloway
W. V. Lampert
Affiliation:
The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6533
T. W. Haas
Affiliation:
The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6533
Paul H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Rorida 32611–2066
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Abstract

Electrical characterization has demonstrated dramatic differences in the amount of heat treatment time required to convert the ohmic contact metallizations from Schottky to ohmic behavior, depending on the layering sequence of the Al, Ge, and Ni metals. Additional time differences were found to be dependent on the doping concentration of the contact layer of the GaAs and on the heat treatment temperature. For samples with Ge at the metal-semiconductor interface, the time required to convert from Schottky to ohmic behavior varies inversely with the doping concentration of the contact layer and directly with heat treatment temperature. Samples with Ni at the metal-semiconductor interface converted from Schottky to ohmic behavior much faster and had a much smaller dependence on the doping concentration and the heat treatment temperature. Models to explain these observations in terms of interdiffusion of the components and phases formed will be proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 941
Copyright
Copyright © Materials Research Society 1992

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References

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