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Kinetic Barriers to Strain Relaxation in GexSi1-x/Si Epitaxy

Published online by Cambridge University Press:  28 February 2011

R. Hull  and
J.C. Bean
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We discuss the kinetic barriers to misfit dislocation nucleation, propagation and interaction in lattice-mismatched GexSi1-x/Si epitaxy. Experimental real-time observations of the strain relaxation process via in-situ annealing experiments in a transmission electron microscope enable each of these processes to be separately studied. Quantitative parameters defining misfit dislocation processes may be derived; these are found to be highly dependent upon the structure geometry. The approximations involved in extending these measurements to a description of the relaxation process during growth are described in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 23
Copyright
Copyright © Materials Research Society 1990

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