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Key Issues Related to the Self-Aligned Formation of CoSi2 in a Salicide Process

Published online by Cambridge University Press:  26 February 2011

L. Van Den Hove ,
R. Wolters ,
M. Geyselaers ,
R. De Keersmaecker  and
G. Declerck
L. Van Den Hove
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 LeuvenBelgium
R. Wolters
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
M. Geyselaers
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
R. De Keersmaecker
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 LeuvenBelgium
G. Declerck
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 LeuvenBelgium
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Abstract

The self-alignment of the Co-Si interaction at the edge of a Si-SiO2 transition has previously been ascribed to the fact that Co is the main moving species during silicide formation. However, the reactions in the Co-Si system are more complex. The phenomena of lateral silicidation and encroachment are therefore investigated at various stages of the Co/Si reaction using samples starting either from sputtered Co layers or from cosputtered Co-Si multilayers with varying average stoichiometries. The mechanisms resulting in the absence of lateral silicidation are clarified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 99
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Osburn, C.M., Tsai, M.Y., Roberts, S., Lucchese, C.J. and Ting, C.Y., in Proc. First Int. Syrp. on VLSI Sci. and Techn., Electrochem. Soc. Pennington NJ, 1982, Vol.82–7, p. 213.Google Scholar
2. Ting, C.Y., Iyer, S.S., Osburn, C.M., Hu, C.J. and Schweighart, A.M., in Proc. First Int. Syrup. on VLSI Sci. and Techn., Electrochem. Soc. Pennington NJ, 1982, Vol.82–7, p. 224.Google Scholar
3. Alperin, M.E., Holloway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V. and Parmantie, W.D., IEEE Trans. Electron Devices ED–32, 141, (1985).Google Scholar
4. Van den hove, L., Wolters, R., Maex, K., De Keersmaecker, R. and Declerck, G., J. Vac. Sci. Techn. B, 4 (6) 1358 (1986).Google Scholar
5. Van den hove, L., Wolters, R., Maex, K., De Keersmaecker, R. and Declerck, G., IEEE Trans. Electron Devices, ED–34 (3), 554 (1987).Google Scholar
6. Tabasky, M., Bullat, E.S., Ditcheck, B.M., Sullivan, M.A. and Shatas, S., IEEE Trans. Electron Devices, ED–34 (3), 548 (1987).Google Scholar
7. Morgan, A.E., Broadbent, E.K., Delfino, M., Coulman, B. and Sadana, D.K., J. Electrochem. Soc., 134 (4), 925 (1987).CrossRefGoogle Scholar
8. van Gurp, G.J., van der Weg, W.F., Sigurd, D., J. Appl. Phys. 49, 4011 (1978).Google Scholar
9. d'Heurle, F.M. and Petersson, C.S., Thin Solid Films, 128, 283 (1985).Google Scholar
10. Kim, S.J., Cheng, Y.T. and Nicolet, M., SPIE Vol.632, Advanced processing and characterizationo f SemiconductorsI II, 261 (1986).Google Scholar
11. Cahoon, E.C., Comrie, C.M., Pretorius, R., Appl. Phys. Lett. 44 (5), 511 (1984).CrossRefGoogle Scholar