Hostname: page-component-669899f699-vbsjw Total loading time: 0 Render date: 2025-04-27T05:03:09.681Z Has data issue: false hasContentIssue false
  • English
  • Français

JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

T.P. Ma
T.P. Ma*
Affiliation:
Yale UniversityCenter Microelectronic Structures and Materials, and Department of Electrical Engineering New Haven, Connecticut, 06520, USA
Get access

Abstract

The principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SiN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 73
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Ma, T.P., IEEE Trans. Electron Dev., vol.45, no.3, pp.680–690, (1998).10.1109/16.661229Google Scholar
2 Guo, Xin and Ma, T.P., IEEE Electron Dev. Letts. Vol.19, No.6, pp.207–209, (1998).Google Scholar
3 Deal, B., MacKenna, E., and Castro, P., J. Electrochem. Soc., vol.116, pp.997–1005 (1969).10.1149/1.2412205Google Scholar
4 Ginovker, A., Gristsenko, V., and Sinitsa, S., Phys. Stat. Sol.(a), vol. 26, pp.489–495, (1974).10.1002/pssa.2210260211Google Scholar
5 Kapoor, V.J., Bailey, R. S., and Stein, H.J., J. Vac. Sci. Technol., vol. A1, no., pp.600–603, (1983).10.1116/1.571966Google Scholar
6 Fujita, S., Ohishi, T., Toyoshima, T., and Sasaki, A.., J. Appl. Phys., vol.57, no.2, pp.426–431, (1985).10.1063/1.334768Google Scholar
7 Maeda, M. and Nakamura, H., J. Appl. Phys., vol.58, no.1, pp.484–489, (1985).10.1063/1.335650Google Scholar
8 Alloert, K., Calster, A. Van, Loos, H., and Lequesne, A., J. Electrochem. Soc., vol.132, pp.1763–1766, (1985).10.1149/1.2114207Google Scholar
9 Knolle, W.R and Osenbach, J.W., J. Appl. Phys., vol. 58, no.3, pp.1248–1254, (1985).10.1063/1.336116Google Scholar
10 Wang, X.W., Shi, Y., Ma, T.P., Cui, G.J., Tamagawa, T., Golz, J., Halpern, B., and Schmitt, J., in 1995 Symp. VLSI Technol. Dig. Tech. Papers, pp.109-110.Google Scholar
11 Khare, Mukesh, Wang, X.W., Ma, T.P., Cui, G.J., Tamagawa, T., Halpern, B., and Schmitt, J., in 1998 Symp. VLSI Technol. Dig. Tech. Papers, pp.218-219.Google Scholar
12 Fleetwood, D.M., IEEE Trans. Nucl. Sci., Vol.39, p.269 (1992).10.1109/23.277495Google Scholar
13 Khare, M. and Ma, T.P., IEEE Electron Dev. Letts. Vol. 20, No.1, pp.57–59, (1999).10.1109/55.737573Google Scholar
14 Guo, Xin, Ma, T.P., Tamagawa, T., and Halpem, B., IEDM Tech. Digest, pp.377-380 (1998).Google Scholar