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JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

T.P. Ma
T.P. Ma*
Affiliation:
Yale UniversityCenter Microelectronic Structures and Materials, and Department of Electrical Engineering New Haven, Connecticut, 06520, USA
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Abstract

The principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SiN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 73
Copyright
Copyright © Materials Research Society 1999

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References

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