Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-20T14:43:15.495Z Has data issue: false hasContentIssue false
  • English
  • Français

Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In

Published online by Cambridge University Press:  25 February 2011

Eric R. White ,
S. Ashok  and
D. L. Allara
Eric R. White
Affiliation:
The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
The Pennsylvania State University, University Park, PA 16802
D. L. Allara
Affiliation:
The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

n+-n and n+-p junctions were formed on n-type and p-type Si using a thin film of phosphorus obtained from a simple vapor source, and driving in the dopant atoms in a rapid thermal processing (RTP) system. The vapor treatment consisted of heating powdered red phosphorus in a nitrogen ambient and allowing the resulting phosphorus vapor to deposit on the Si samples. This was done in an inexpensive apparatus constructed from flasks and test tubes. Following the vapor treatment, an SiOxfilm was sputtered over the phosphorus coating in order to serve as a capping layer during subsequent RTP drive-in that forms the junction. The junction properties were characterized by spreading resistance and electrical (IV and CV) measurements after deposition of metal contacts layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 265
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zagozdzon-Wosik, W., Wolfe, J. C., Teng, C. W., IEEE Electron Device Letters 12, 264 (1991).Google Scholar
2. Shannon, J. M., Appl. Phys. Letters 24, 369 (1974).CrossRefGoogle Scholar
3. Shannon, J. M., Appl. Phys. Letters 25, 75 (1974).CrossRefGoogle Scholar
4. Shannon, J. M., Solid-state Electronics 19, 537 (1976).Google Scholar