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Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

Published online by Cambridge University Press:  17 March 2011

L. S. Robertson ,
P. N. Warnes ,
K. S. Jones ,
S. K. Earles ,
M. E. Law ,
D. F. Downey ,
S. Falk  and
J. Liu
L. S. Robertson
Affiliation:
Dept. of Materials Science and Engineering, University of Florida
P. N. Warnes
Affiliation:
Dept. of Materials Science and Engineering, University of Florida
K. S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida
S. K. Earles
Affiliation:
Dept. of Electrical and Computer Engineering, University of Florida
M. E. Law
Affiliation:
Dept. of Electrical and Computer Engineering, University of Florida
D. F. Downey
Affiliation:
Varian Ion Implant Systems
S. Falk
Affiliation:
Varian Ion Implant Systems
J. Liu
Affiliation:
Varian Ion Implant Systems
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Abstract

The interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B4.2
Copyright
Copyright © Materials Research Society 2000

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References

1 Michel, A. E., Rausch, W., Ronsheim, P. A., and Kastl, R. H., Appl. Phys. Lett. 50, 416 (1987).10.1063/1.98160Google Scholar
2 Angelucci, R., Negrini, P., and Solmi, S., Appl. Phys. Lett. 49, 1468 (1986).10.1063/1.97305Google Scholar
3 Morehead, F. F. and Lever, R. F., Appl. Phys. Lett. 48, 151 (1986).10.1063/1.96980Google Scholar
4 Fahey, P. M., Griffin, P. B., and Plummer, J. D., Rev. Mod. Phys. 61, 289 (1989).10.1103/RevModPhys.61.289Google Scholar
5 Michel, A. E., Fang, F. F., and Pan, E. S., J. Appl. Phys. 45, 2991 (1974).10.1063/1.1663714Google Scholar
6 Beanland, D. G., Sol. Stat. Elec. 21, 537 (1978).10.1016/0038-1101(78)90024-2Google Scholar
7 Fuse, G., Hirao, T., Inoue, K., Takayanagi, S., and Yaegashi, Y., J. Appl. Phys. 53, 3650 (1982).10.1063/1.331148Google Scholar
8 Wilson, R. G., J. Appl. Phys. 54, 6879 (1983).10.1063/1.331993Google Scholar
9 Muller, H., Ryssel, H., and Schmid, K., J. Appl. Phys. 43, 2006 (1972).10.1063/1.1661439Google Scholar
10 Downey, D. F., Chow, J. W., Ishida, E., and Jones, K. S., Appl. Phys. Lett. 73, 1263 (1998).10.1063/1.122146Google Scholar