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I-V, C-V, and Hall Effect Studies of Indium-Doped Lpe GaAs

Published online by Cambridge University Press:  26 February 2011

J.F. Chen ,
K. Xie  and
C.R. Wie
J.F. Chen
Affiliation:
SUNY-Buffalo, 201 Bonner Hall, Dept. of ECE, Amherst, NY 14260
K. Xie
Affiliation:
SUNY-Buffalo, 201 Bonner Hall, Dept. of ECE, Amherst, NY 14260
C.R. Wie
Affiliation:
SUNY-Buffalo, 201 Bonner Hall, Dept. of ECE, Amherst, NY 14260
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Abstract

We have studied the effects of In doping on the electrical properties of a liquid phase epitaxially (LPE) grown GaAs. The I–V characteristics of Au-GaAs Schottky diodes show, for the layer with In concentration of 2.4 × 1019 cm−3, an ideality factor close to 1.04 over more than seven decades of current. For the same sample, the reverse I–V characteristics are close to an ideal Schottky diode and can be fitted by a theoretical curve, combining the thermionic field emission and thermionic emission. The electrical improvement is closely related to the low etch pit density and other structural improvements. This indicates that, as in the LEC growth, In has effects on the reduction of disloation density in the LPE grown GaAs epi-layer. For doping levels higher than 6×1019 cm−3, an excess forward current is produced at low voltages and low temperatures. A large leakage current is observed under the reverse bias. This property is attributed to a high field effect, with field emission via a trap state as the most likely cause. Hall measurements showed that the ratio of free-carrier concentration ND−NA to the total-carrier concentration ND+NA increased with increasing In concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 209
Copyright
Copyright © Materials Research Society 1989

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References

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