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Issues in the Growth of Bulk Crystals of Infrared Materials

Published online by Cambridge University Press:  25 February 2011

K. J. Bachmann  and
H. Goslowsky
K. J. Bachmann
Affiliation:
Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695-8204.
H. Goslowsky
Affiliation:
Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695-8204.
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Abstract

Selected issues in the growth of bulk single crystals for applications in infrared optoelectronics are reviewed including an overview over materials choices, bulk III-V crystal growth, and the growth of II-VI, IV-VI and I-III-VI2 compounds and alloys. The most important issues are the control of purity, perfection, stoichiometry, and uniformity during crystal growth and the control of the surface properties in wafer fabrication. Specific examples are given to illustrate problems related to these issues and to discuss approaches to their solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 69
Copyright
Copyright © Materials Research Society 1987

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References

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