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Issues in Emissivity of Silicon

Published online by Cambridge University Press:  10 February 2011

S. Abedrabbo ,
J. C. Hensel ,
O. H. Gokce ,
F. M. Tong ,
B. Sopori ,
A. T. Fiory  and
N. M. Ravindra
S. Abedrabbo
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
J. C. Hensel
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
O. H. Gokce
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
F. M. Tong
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
B. Sopori
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
A. T. Fiory
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1–20μm are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 95
Copyright
Copyright © Materials Research Society 1998

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References

VI. References

[1] Sato, K., Japanese Journal of Applied Physics, Vol.6, No. 3, p. 339–347, (1967).Google Scholar
[2] Vandenabeele, P. and Maex, K., J. Appl. Phys., Vol.72, pp. 5867–5875, (1992).Google Scholar
[3] Ravindra, N.M., Abedrabbo, S., Chen, W., Tong, F.M., Nanda, A.K. and T. Speranza, IEEE Transactions on Semiconductor Manufacturing, pp.30–39, Feb., (1998).Google Scholar
[4] Ravindra, N. M.., Tong, F.M., Schmidt, W., Chen, W., Abedrabbo, S., Nanda, A., Speranza, T. and Tello, A.M., ISSM'96, Tokyo, Japan. pp. 101–104, Oct., (1996).Google Scholar
[5] Born, M. and Wolf, E., “Principles of Optics”, Pergamon Press, 4th edition, Ch.8.3, p. 381, (1970).Google Scholar
[6] Ravindra, N.M., Abedrabbo, S., Gokce, O.H., Tong, F.M., Patel, A., Rajasekhar, V., Williamson, G. and Maszara, W., IEEE Transactions on Components, Packaging, and Manufacturing Technology, (In press).Google Scholar
[7] Measurements of roughness performed at Burleigh Instruments, April, (1998).Google Scholar
[8] Moller, K.D., “Optics”, University Science Books, Mill Valley, California, 1st edition, pp.4, 201, (1988).Google Scholar
[9] Smith, R.A., “Semiconductors”, New York: Cambridge, pp.216–222, (1961).Google Scholar
[10] Sturm, J.C. and Reaves, A., IEEE Trans. Electron Devices, Vol.39, p.81, (1992).Google Scholar
[I1] Hebb, J. and Jensen, K.F., “Multi-Rad”, User's Manual, Sponsored by SEMATECH, (1997).Google Scholar
[12] Sopori, B., Laser Focus, Vol.34, pp.159–161, Feb., (1998).Google Scholar
[13] Yablonovitch, Eli and Cody, G.D., IEEE Trans. on Elect. Dev., Vol. ED–29, NO. 2, February, (1982).Google Scholar