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Is Thermal and Light-Induced Annealing of Met Astable Defects in a-Si:H Driven by Electrons?

Published online by Cambridge University Press:  15 February 2011

Helena Gleskova  and
S. Wagner
Helena Gleskova
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We report results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H). We tested the hypothesis that defect-annealing by both heating or illumination is driven by the density of free electrons. This hypothesis is formulated via the rate equation - dN/dt = A nα N f (T), where N is the defect density, t the time, A a constant, n the free electron density, and f (T) a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with a ranging from 0.39 to 0.76, but not the third set, where we varied the temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 343
Copyright
Copyright © Materials Research Society 1995

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References

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