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Is There a Way to a Perfect Rapid Thermal Processing System?

Published online by Cambridge University Press:  28 February 2011

R. Kakoschke
R. Kakoschke*
Affiliation:
Siemens AG, HL PE 21, Otto-Hahn-Ring 6, D-8000 Mijinchen 83, FRG
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Abstract

The temperature within a rapid thermal processing system is characterized by the intensity distributions of the lamp light and of the reabsorbed heat radiation of the wafer. The intensity to the front and back side of the wafer and to the wafer edge have to be considered for pattern induced effects and additional energy loss at the edge, respectively. Monte-Carlo simulations show that the major problems with a multi lamp arrangement with surrounding reflector are due to nonuniform irradiation by the lamps, nonuniform energy loss of the wafer, and additional energy loss at the wafer edge. The temperature influencing quantities cannot be optimized at the same time without modifications of the reflector geometry or without a subsidiary light flux which is controllable independently of the lamp light.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 159
Copyright
Copyright © Materials Research Society 1991

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