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Is Self-Organisation During Ostwald Ripening a Crucial Process in Ion Beam Synthesis ?

Published online by Cambridge University Press:  22 February 2011

S. Reiss ,
K.-H. Heinig ,
R. Weber  and
W. Skorupa
S. Reiss
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany
K.-H. Heinig
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany
R. Weber
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany
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Abstract

Results of a computer simulation of Ostwald ripening during ion beam synthesis of a SIMOX layer are presented. Based on investigations of the as-implanted state the simulation starts with equal-sized SiO2 precipitates, homogeneously distributed in a layer. The simulation shows clearly that Ostwald ripening forms structures in such a system by means of self-organisation.

This structure forming process explains in a simple and consistent manner structures of in the concentration profile like ”humps”, ”spikes” and ”banding”, which have been observed experimentally.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 819
Copyright
Copyright © Materials Research Society 1994

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References

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