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Is an Arsenic-Antisite-Defect a Constituent of Hydrogen-Related:Metastable Defects (M3/M4) In GaAs?

Published online by Cambridge University Press:  10 February 2011

T. Okumura  and
T. Shinagawa
T. Okumura
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University 1–1 Minami-ohsawa, Hachioji, Tokyo 192–0397, Japan, [email protected]
T. Shinagawa
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University 1–1 Minami-ohsawa, Hachioji, Tokyo 192–0397, Japan, [email protected]
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Abstract

The hydrogen-related metastable defects (M31M4) in n-GaAs, first found by Buchwald et al., were introduced only in the crystals containing the EL2 center. Off-center oxygen (=EL3), could not be responsible for their formation. A quantitative analysis with the samples exposed to atomic hydrogen showed that the M4 defect consisted of two different configurations. One of them did couple with M3, but is latent in the as-exposed state. It was formed after bias annealing at higher temperatures, such as 420 K. The other part of the M4 defect (M4•) existed at room temperature and after annealing at 513K, but disappeared and reappeared upon forward- and reverse-bias annealings, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 257
Copyright
Copyright © Materials Research Society 1998

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