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Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors

Published online by Cambridge University Press:  08 May 2015

Heather C. Chiamori ,
Nicholas Broad ,
Chetan Angadi ,
Ruth Miller ,
Caitlin Chapin ,
Ateeq Suria ,
Sharmila Bhattacharya  and
Debbie G. Senesky
Heather C. Chiamori
Affiliation:
Aeronautics & Astronautics Dept., Stanford University, Stanford, CA 94305, U.S.A.
Nicholas Broad
Affiliation:
Electrical Engineering Dept., Stanford University, Stanford, CA 94305, U.S.A.
Chetan Angadi
Affiliation:
NASA Ames Research Center, Moffett Field, CA 94035, U.S.A.
Ruth Miller
Affiliation:
Aeronautics & Astronautics Dept., Stanford University, Stanford, CA 94305, U.S.A.
Caitlin Chapin
Affiliation:
Mechanical Engineering Dept., Stanford University, Stanford, CA 94305, U.S.A.
Ateeq Suria
Affiliation:
Mechanical Engineering Dept., Stanford University, Stanford, CA 94305, U.S.A.
Sharmila Bhattacharya
Affiliation:
NASA Ames Research Center, Moffett Field, CA 94035, U.S.A.
Debbie G. Senesky
Affiliation:
Aeronautics & Astronautics Dept., Stanford University, Stanford, CA 94305, U.S.A. Electrical Engineering Dept., Stanford University, Stanford, CA 94305, U.S.A.
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Abstract

Radiation-tolerant materials, sensors and electronics can enable lightweight space subsystems with reduced packaging requirements and increased operation lifetimes. Such technology can be used within extreme harsh environments related to space exploration, radiation medicine and power generation (combustion and nuclear). Gallium nitride (GaN), a ceramic semiconductor material, is a candidate material due to its stability within high-radiation, high-temperature and chemically corrosive environments. In addition, the wide bandgap of GaN (3.4 eV) can be leveraged for ultraviolet (UV) wavelength photodetection. In metal-semiconductor-metal (MSM) photodetector architectures using Schottky contacts, transparent electrodes (e.g., graphene) can increase sensitivity and improve overall device response. Here we present fabrication and characterization of GaN-based UV photodetectors using graphene electrodes irradiated up to 200 krad total ionizing dose (TID) then tested under UV light and dark conditions. For current-voltage measurements taken at 90, 120 and 200 krad TID, the current-voltage response does not vary significantly. From 90 to 120 krad TID, the responsivity shifts by 2% before dropping off at 200 krad TID. These initial findings suggest that graphene/GaN MSM UV photodetectors can provide robust operation within extreme harsh environments.

Keywords

III-Vtransparent conductorphotoconductivity
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1746: Symposium GG – Nanomaterials for Harsh Environment Sensors and Related Electronic and Structural Components—Design, Synthesis, Characterization and Utilization , 2015 , mrsf14-1746-gg01-04
Copyright
Copyright © Materials Research Society 2015 

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