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Irradiation Induced Effects at Interfaces in a Nanocrystalline Ceria Thin Film on a Si Substrate
Published online by Cambridge University Press: 18 March 2013
Abstract
Thin films of nanocrystalline ceria on a Si substrate have been irradiated with 3 MeV Au+ ions to fluences of up to 1x1016 ions cm-2, at temperatures ranging between 160 to 400 K. During the irradiation, a band of contrast is observed to form at the thin film/substrate interface. Analysis by scanning transmission electron microscopy in conjunction with energy dispersive and electron energy loss spectroscopy techniques revealed that this band of contrast was a cerium silicate amorphous phase, with an approximate Ce:Si:O ratio of 1:1:3.
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- Copyright © Materials Research Society 2013