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Irradiated cubic single crystal SiC as a high temperature sensor

Published online by Cambridge University Press:  01 February 2011

Alex A. Volinsky  and
Lev Ginzbursky
Alex A. Volinsky
Affiliation:
University of South Florida, Department of Mechanical Engineering, Tampa FL 33620USA, [email protected]
Lev Ginzbursky
Affiliation:
L.G. Tech-Link, Chandler, AZ 85226 USA, [email protected]
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Abstract

Radiation is known to cause point defects formation in different materials. In the case of cubic SiC single crystal radiation flux on the order of 2·1020 neutrons/cm2 at 0.18 MeV causes over 3% volume lattice expansion. Radiation-induced strain (measurable by X-Ray diffraction) can be relieved when the annealing temperature exceeds the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement was developed a while ago. Single crystal SiC sensor small size (200–500 microns), wide temperature range (150–1450 °C), “no-lead” installation, and exceptional accuracy make it very attractive for use in small, rotating and “hard-to-access” parts, including, but not limited to gas turbine blades, space shuttle ceramic tiles, automobile engines, etc. With the advances in X-Ray diffraction measurements, crystal and thin film growth techniques, it is the time to revise and update this technology. Modeling radiation damage, as well as annealing effects are also beneficial.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R5.3
Copyright
Copyright © Materials Research Society 2004

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References

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