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IR Tomography of the Lifetime and Diffusion Length of Charge Carriers in Semiconductor Silicon Ingots

Published online by Cambridge University Press:  10 February 2011

V.D. Akhmetov  and
N.V. Fateev
V.D. Akhmetov
Affiliation:
Institute of Semicoductor Physics, Novosibirsk, Russia, [email protected]
N.V. Fateev
Affiliation:
Institute of Semicoductor Physics, Novosibirsk, Russia, [email protected]
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Abstract

A nondestructive method for estimating quality of single-crystal Si ingots is proposed. The method provides a three-dimensional pattern of the lifetime and diffusion length of charge carriers inside Si ingots up to 300 mm in diameter and I m in length. The method employs optical probing of ingots with laser-emitted radiation and includes laser-induced photoinjection of charge carriers followed by laser-assisted monitoring of their spatial distributions and time evolution in any part of the ingot about 1 cm in size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 213
Copyright
Copyright © Materials Research Society 2000

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References

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