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IR Sources and Modulators Based on InAs/GaSb/AlSb-Family Quantum Wells

Published online by Cambridge University Press:  10 February 2011

J. R. Meyer ,
C. L. Felix ,
J. I. Malin ,
I. Vurgaftman ,
C.-H. Lin ,
R. Q. Yang ,
S.-S. Pei  and
L. R. Ram-Mohan
J. R. Meyer
Affiliation:
Code 5613, Naval Research Laboratory, Washington, DC 20375
C. L. Felix
Affiliation:
Code 5613, Naval Research Laboratory, Washington, DC 20375
J. I. Malin
Affiliation:
Code 5613, Naval Research Laboratory, Washington, DC 20375
I. Vurgaftman
Affiliation:
Code 5613, Naval Research Laboratory, Washington, DC 20375
C.-H. Lin
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
R. Q. Yang
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
S.-S. Pei
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
L. R. Ram-Mohan
Affiliation:
Worcester Polytechnic Institute, Worcester, MA 01609
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Abstract

We review recent applications of wavefunction engineering to the design of antimonide quantum heterostructures with favorable properties for infrared devices. Examples include electro-optical and all-optical modulators based on Г-L intervalley transfer, type-II quantum well lasers with enhanced gain per injected carrier, and type-II interband cascade lasers predicted to combine low thresholds and high output powers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 31
Copyright
Copyright © Materials Research Society 1997

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References

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