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Ir Laser-Induced Deposition of Silicon Thin Films

Published online by Cambridge University Press:  15 February 2011

T. R. Gattuso ,
M. Meunier ,
D. Adler  and
J. S. Haggerty
T. R. Gattuso
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
M. Meunier
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
D. Adler
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. S. Haggerty
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

The deposition of a-Si:H by means of CO2 laser-induced pyrolysis of silane gas is described. Deposition rates were found to increase with increasing silane flow rate, reactor pressure, laser power and substrate temperature. Spin density decreased and both optical gap, and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 215
Copyright
Copyright © Materials Research Society 1983

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References

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