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Ir Laser-Induced Deposition of Silicon Thin Films
Published online by Cambridge University Press: 15 February 2011
Abstract
The deposition of a-Si:H by means of CO2 laser-induced pyrolysis of silane gas is described. Deposition rates were found to increase with increasing silane flow rate, reactor pressure, laser power and substrate temperature. Spin density decreased and both optical gap, and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported.
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- Research Article
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- Copyright © Materials Research Society 1983
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