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Ion-Surface Interactions During Epitaxy

Published online by Cambridge University Press:  26 February 2011

S. A. Barnett ,
C.-H. Choi  and
R. Kaspi
S. A. Barnett
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL 60208
C.-H. Choi
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL 60208
R. Kaspi
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL 60208
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Abstract

Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the interest in this area has centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage effects, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism from Stranski-Krastanov to layer-by-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 43
Copyright
Copyright © Materials Research Society 1991

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