Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T02:23:13.012Z Has data issue: false hasContentIssue false

Ionization of decaborane with controlled hydrogen content by charge transfer from ambient gas

Published online by Cambridge University Press:  04 April 2011

Yuji Ohishi
Affiliation:
Department of Nuclear Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871, Japan Department of Advanced Material Science, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
Kaoru Kimura
Affiliation:
Department of Advanced Material Science, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
Masaaki Yamaguchi
Affiliation:
Department of Advanced Material Science, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
Noriyuki Uchida
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology (NIRC), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan.
Toshihiko Kanayama
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology (NIRC), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan.
Get access

Abstract

We present the ionization of decaborane (B10H14) and formation of hydrogen- and boron-contents-controlled B10-yHx+ through the charge transfer from ambient gas ion to decaborane molecules in an external quadrupole static attraction ion trap. The charge transfer energy is estimated from the experimentally observed products. PBE0/6-311+G(d)//B3LYP/6-31G(d) level of DFT calculations are conducted to investigate the mechanism of charge transfer from ambient gas ion. The calculation of the difference of ionization energies and mismatch of orbital energies between decaborane and ambient gas reveals the mechanism of ionization.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohishi, Y., Kimura, K., Yamaguchi, M., Uchida, N. and Kanayama, T., J. Chem. Phys. 128, 124304 (2008).Google Scholar
2. Sonsnowski, M., Albano, M. A., Babaram, V., Gurudath, R., Poate, J. M., and Jacobson, D., J. Electrochem. Soc. 147, 4329 (2000).Google Scholar
3. Ohishi, Y., Kimura, K., Yamaguchi, M., Uchida, N. and Kanayama, T., J. Chem. Phys. 133, 074305 (2010).Google Scholar
4. Kanayama, T., Jpn. J. Appl. Phys. 33, L1792 (1994).Google Scholar
5. Kanayama, T. and Murakami, H., J. Vac. Sci. Technol. B 15, 2882 (1997).Google Scholar
6. Hall, S. G., Murakami, H., Palmer, R. E., and Kanayama, T., Jpn. J. Appl. Phys. 26, L639 (1997).Google Scholar
7. Hiura, H. and Kanayama, T., Rev. Sci. Instrum. 72, 2893 (2001).Google Scholar
8. Adamo, C. and Barone, V., J. Chem. Phys. 110, 6158 (1999).Google Scholar
9. Zhao, Y. and Truhlar, D. G., J. Phys. Chem. A 109, 5656 (2005).Google Scholar
10. Ernzerhof, M. and Scuseria, G. E., J. Chem. Phys. 110, 5029 (1999).Google Scholar
11. Perdew, J. P., Burke, K. and Ernzerhof, M., Phys. ReV. Lett. 77, 3865 (1996).Google Scholar
12. Gaussian, , 03 Revision E.01, Frisch, M. J., Trucks, G. W., Schlegel, H. B., Scuseria, G. E., Robb, M. A., Cheeseman, J. R., Montgomery, J. A. Jr., Vreven, T., Kudin, K. N., Burant, J. C., Millam, J. M., Iyengar, S. S., Tomasi, J., Barone, V., Mennucci, B., Cossi, M., Scalmani, G., Rega, N., Petersson, G. A., Nakatsuji, H., Hada, M., Ehara, M., Toyota, K., Fukuda, R., Hasegawa, J., Ishida, M., Nakajima, T., Honda, Y., Kitao, O., Nakai, H., Klene, M., Li, X., Knox, J. E., Hratchian, H. P., Cross, J. B., Bakken, V., Adamo, C., Jaramillo, J., Gomperts, R., Stratmann, R. E., Yazyev, O., Austin, A. J., Cammi, R., Pomelli, C., Ochterski, J. W., Ayala, P. Y., Morokuma, K., Voth, G. A., Salvador, P., Dannenberg, J. J., Zakrzewski, V. G., Dapprich, S., Daniels, A. D., Strain, M. C., Farkas, O., Malick, D. K., Rabuck, A. D., Raghavachari, K., Foresman, J. B., Ortiz, J. V., Cui, Q., Baboul, A. G., Clifford, S., Cioslowski, J., Stefanov, B. B., Liu, G., Liashenko, A., Piskorz, P., Komaromi, I., Martin, R. L., Fox, D. J., Keith, T., Al-Laham, M. A., Peng, C. Y., Nanayakkara, A., Challacombe, M., Gill, P. M. W., Johnson, B., Chen, W., Wong, M. W., Gonzalez, C., and Pople, J. A., Gaussian, Inc., Wallingford CT, 2004.Google Scholar