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Ionic Impurities in Poly(vinyl alcohol) Gate Dielectrics and Hysteresis Effects in Organic Field Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Martin Egginger
Affiliation:
[email protected], Johannes Kepler University Linz, LIOS - Linz Institute for Organic Solar Cells, Altenbergerstr. 69, Linz, 4040, Austria
Mihai Irimia-Vladu
Affiliation:
[email protected], Johannes Kepler University Linz, SOMAP - Soft Matter Physics, Altenbergerstr. 69, Linz, 4040, Austria
Reinhard Schwödiauer
Affiliation:
[email protected], Johannes Kepler University Linz, SOMAP - Soft Matter Physics, Altenbergerstr. 69, Linz, 4040, Austria
Andreas Tanda
Affiliation:
[email protected], plastic electronic, Rappetsederweg 28, Linz, 4040, Austria
Siegfried Bauer
Affiliation:
[email protected], Johannes Kepler University Linz, SOMAP - Soft Matter Physics, Altenbergerstr. 69, Linz, 4040, Austria
Serdar Niyazi Sariciftci
Affiliation:
[email protected], Johannes Kepler University Linz, LIOS - Linz Institute for Organic Solar Cells, Altenbergerstr. 69, Linz, 4040, Austria
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Abstract

Poly(vinyl alcohol) (PVA) is a water based dielectric often used as a coating layer in paper industry. Due to its water solubility PVA is also interesting as gate insulator in organic field effect transistors. Depending on the preparation of the PVA gate, transistors with and without hysteresis can be produced, with applications in organic electronic circuits or memory elements. In the production of PVA, a major side product is sodium acetate, an ionic salt not completely removed during industrial purification. Such ionic impurities likely influence the hysteresis in PVA based organic field effect transistors. While a hysteresis is desirable in memory elements it is unwanted in transistors for electronic circuits. Ways to prepare transistors with a desired transfer characteristic are described, for example by using electronic grade products directly from the purchaser of PVA, or by employing PVA purified by means of dialysis. Measurements are performed with metal-insulator-metal (MIM) structures and organic field effect transistors (OFETs), where Buckminsterfullerene C60 is employed as organic semiconductor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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