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Ion-Beam-Source Studies of Hydrogen Motion and Trapping in Silicon

Published online by Cambridge University Press:  28 February 2011

Carleton H. Seager  and
Robert A. Anderson
Carleton H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Robert A. Anderson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We have investigated the “real time” diffusion and trapping of hydrogen insilicon with rapid 1 MHz capacitance and current-voltage measurements on boron and phosphorus doped Schottky-barrier and MIS structures. Hydrogen is introduced by implanting hydrogen ions into the front electrodes of these capacitors. As interpreted by numerical modeling, our data from p-type silicon indicate that the 300 K hydrogen diffusivity is =10-10cm2/s, that =10% of the mobile hydrogen is positively charged, and that these ions are trapped at boron acceptors with a capture radius of 70 Å. The behavior of the n-type capacitors was quite different; hydrogenation resulted in the appearance of a dense layer of positive charge quite near the silicon surface, and in some cases negatively charged species which compensate phosphorus donors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 197
Copyright
Copyright © Materials Research Society 1989

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