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Ion-Beam Mixing and Amorphization in Au/Zr Bilayers*
Published online by Cambridge University Press: 26 February 2011
Abstract
Au/Zr bilayer films with inert-gas markers were produced by low energy (< 4 keV) implantation. Mass transport was measured during ion-beam mixing with 1 MeV Kr at several temperatures between 330 and 540K. Two distinct regimes of apparent Arrhenius behavior were found with activation enthalpies of 0.06 and 0.9 eV in the temperature range 330–440K and 460–540K, respectively. Microstructural changes during ion-beam mixing were studied in situ, in a high voltage electron microscope. Heterogeneous nucleation of an amorphous phase was observed during mixing. The results are compared with similar studies reported previously in Ni/Zr bilayer specimens.
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- Copyright © Materials Research Society 1988
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Work supported by the U. S. Department of Energy, BES-Materials Sciences, under Contract W-31-109-Eng-38.
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