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Ion-Beam Induced Epitaxial Crystallization of NiSi2 And CoSi2

Published online by Cambridge University Press:  25 February 2011

M.C. Ridgway ,
R.G. Elliman  and
J.S. Williams
M.C. Ridgway
Affiliation:
Microelectronics and Materials Technology Center, Royal Melbourne Institute of Technology, Melbourne, Australia Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
R.G. Elliman
Affiliation:
Microelectronics and Materials Technology Center, Royal Melbourne Institute of Technology, Melbourne, Australia
J.S. Williams
Affiliation:
Microelectronics and Materials Technology Center, Royal Melbourne Institute of Technology, Melbourne, Australia Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
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Abstract

Ion—beam induced epitaxial crystallization (IBIEC) of amorphous N1Si2 and CoSi2 layers is demonstrated. Epitaxial metal suicide layers on (111) Si substrates were implanted with 40 keV Si ions to form amorphous surface layers. IBIEC of amorphous NiSi2 and CoSi2 layers was induced at 13—74°C with 1.5 MeV Ne ion irradiation and proceeded in a layer—by—layer manner from the original amorphous/crystalline interface with activation energies of 0.26 ± 0.07 and 0.21 ± 0.06 eV for N1Si2 and CoSi2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 131
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Ridgway, M.C., Elliman, R.G., Thornton, R.P., and Williams, J.S., Appl. Phys. Lett., submitted (1989).Google Scholar
2 Williams, J.S., in Surface Modification and Alloying by Laser. Ion, and Electron Beams, edited by Poate, J.M., Foti, G., and Jacobson, D.C. (Plenum Publishing, New York, 1983) p. 133 and references therein.Google Scholar
3 Elliman, R.G., Williams, J.S., Brown, W.L., Leiberich, A., Mäher, D.M., and Knoell, R.V., Nucl. Instr. and Meth. B19/20. 435 (1987) and references therein.Google Scholar
4 Ridgway, M.C., Elliman, R.G., and Williams, J.S., Appl. Phys. Lett., submitted (1989).Google Scholar