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Ion Yield, Sputter Rate, and Sims Matrix Effects in Quantitative Analysis of (AlxGa1−x)0.5N0.5

Published online by Cambridge University Press:  10 February 2011

D.L. Lefforge ,
Y.L. Chang ,
M. Ludowise  and
E.L. Allen
D.L. Lefforge
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94304
Y.L. Chang
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94304
M. Ludowise
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94304
E.L. Allen
Affiliation:
San Jose State University, San Jose, CA 95192
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Abstract

Aluminum gallium nitride (AlGaN) material is used in GaN-based electronic and optoelectonic devices. The Al and Ga ratio can be adjusted to produce material with different compositions and electronic properties. In this set of experiments epitaxial films of (AlxGa1−x)0.5N0.5 with x ranging from 0 to 1 were investigated. Primary composition was determined with Rutherford backscattering spectrometry (RBS). From secondary ion mass spectrometry (SIMS) profiles a correlation of secondary ion counts was made to RBS determinations of primary composition. The SIMS data was also used to determine sputter rate and the relative sensitivity factor (RSF) of O, Mg and Si in (AlxGa1−x)0.5N0.5 material. The correlation of SIMS data with RBS and knowledge of the sputter rate and RSF dependence on composition are essential for the characterization of (AlxGa1−x)0.5N0.5 films

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 155
Copyright
Copyright © Materials Research Society 1998

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