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Ion Sources for Ion Beam Assisted Thin Film Deposmon

Published online by Cambridge University Press:  21 February 2011

Igor V. Svadkovsk
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
Anatoly P. Dostanko
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
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Abstract

Two types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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