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Ion Projection Lithography for Nano Patterning

Published online by Cambridge University Press:  10 February 2011

A. Heuberger  and
W. Bruenger
A. Heuberger
Affiliation:
Fraunhofer-Institute for Silicon-Technology (ISiT), Fraunhofer Str. 1, D- 25524 Itzehoe, Germany, +49–4821–17–4211 +49–4821–17–4250, [email protected]
W. Bruenger
Affiliation:
Fraunhofer-Institute for Silicon-Technology (ISiT), Fraunhofer Str. 1, D- 25524 Itzehoe, Germany, +49–4821–17–4211 +49–4821–17–4250, [email protected]
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Abstract

As a result of continuous improvement of the resist process, the experimental ion projector in the Fraunhofer Institute in Berlin (manufactured by Ion Microfabrication Systems, IMS, Vienna) has been able to print 75 nm lines and spaces into 180 nm thick standard DUV resist UV II HS without pattern collapse. A new wafer flow process for more reliable open stencil mask making was developed by IMS –Chips, Stuttgart (Germany), based on SOT wafers. Resistless direct surface modification by He and Xe ions has been tested on metallic and magnetic films in the Berlin projector. This method opens up a new possibility for the production of patterned media for future magnetic storage disks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 3
Copyright
Copyright © Materials Research Society 2000

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