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Ion Mixing in the Ni-Sn System

Published online by Cambridge University Press:  25 February 2011

L. Calliari ,
L.M. Gratton ,
L. Guzman ,
G. Principi  and
C. Tosello
L. Calliari
Affiliation:
Istituto per la Ricerca Scientificae Tecnologica, Povo (Trento), Italy
L.M. Gratton
Affiliation:
Facoltà di Scienze, Università di Trento, Italy
L. Guzman
Affiliation:
Istituto per la Ricerca Scientificae Tecnologica, Povo (Trento), Italy
G. Principi
Affiliation:
Istituto per la Ricerca Scientificae Tecnologica, Povo (Trento), Italy Istitue.lstituto di Chimica Industriale, Università di Padova, Italy
C. Tosello
Affiliation:
Istituto per la Ricerca Scientificae Tecnologica, Povo (Trento), Italy Facoltà di Scienze, Università di Trento, Italy
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Abstract

Nickel substrates were coated with a thin Sn film and implanted with 100 keV Xe+ to fluences between 3 and 7.1015 ions/cm2. Surface chemistry changes were monitored using Auger and Mfssbauer spectroscopies. By comparing between profiles of un-implanted and implanted specimens, it was found that ion implantation through the film caused Ni to move into the Sn film and Sn to penetrate into the Ni substrate. The Mdssbauer analysis disclosed the presence of new surface phases. A substantial increase in the tarnishing resistance of Ni was found by using this treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 85
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Tsaur, B.Y., Lau, S.S., Hung, L.S. and Mayer, J.W., Nucl. Instr. Methods 182/183, 67 (1981)Google Scholar
2. Tsaur, B.Y., Lau, S.S. and Mayer, J.W., Appl. Phys Lett. 36, 823 (1980)Google Scholar
3. Tsaur, B.Y. and Mayer, J.W., Appl. Phys. Lett. 37, 389 (1980)Google Scholar
4. Lau, S.S., Liu, B.X. and Nicolet, M.A., Nucl. Instr. Methods 209/210, 97 (1983)Google Scholar
5. Liu, B.X., Johnson, W.L., Nicolet, M.A. and Lau, S.S., Appl. Phys. Lett. 42, 45 (1983);Google Scholar
Nucl. Instr. Methods 209/210, 229 (1983)Google Scholar
6. Hung, L.S., Nastasi, M., Gyulai, J. and Mayer, J.W., Appl. Phys. Lett. 42, 672 (1983)Google Scholar
7. Hashimoto, K., Osada, K., Matsumoto, T., Shimodaira, S., Corros. Sci. 16, 71, 909, 935 (1976)Google Scholar
8. Evans, C.J., J. of Metals, dec. 1982, p. 43Google Scholar
9. Clarke, M. and Britton, C.S., Corros. Sci. 3, 207 (1963)Google Scholar
10. Grant, W.A., Nucl. Instr. Methods 182/183, 809 (1981)Google Scholar
11. Ali, A., Grant, W.A. and Grundy, P.J., Phil. Mag. 37 B, 353 (1978)Google Scholar
12. Preece, C.M., Kaufmann, E.N., Staudinger, A. and Buene, L., in “Ion Implantation Metallurgy”, ed. by Preece, M. and Hirvonen, J.K., (AIME, 1980), p. 77Google Scholar
13. Chen, Q.M., Chen, H.M., Bai, X.D., Zhang, J.Z., Wang, H.H. and Li, H.D., Nucl. Instr. Methods 209/210, 867 (1983)Google Scholar
14. Cohen, C., Drigo, A.V., Bernas, H., Chaumont, G., Krolas, K. and Thomé, L., Phys. Rev. Lett. 48, 1193 (1982)Google Scholar
15. Davis, L.E. et al, “Handbook of Auger Electron Spectroscopy”, publ. by Phys. El. Div. (Perkin-Elmer, 1978)Google Scholar
16. Andersen, H.H. and Bay, H.L., in “Sputtering by Particle Bombardment I“, ed. by Behrisch, R. (Springer, Berlin, 1981) p. 183Google Scholar
17. Gauzzi, F., Maddalena, A., Principi, G., Verdini, B., Proc. Int. Conf. Applied Mössbauer Effect Alma-Ata (USSR) sept. 1983; ed. by Sci Acad. USSR, in pressGoogle Scholar
18. Silver, J., Mackay, C.A. and Donaldson, J.D., J. Mater. Sci. 11, 836 (1976)Google Scholar
19. Bonora, P.L., Cerisola, G., Tosello, C. and Tosto, S., in “Ion Implantation into Metals”, ed. Ashworth, V., Grant, W.A. and Procter, R.P.M., (Pergamon, Oxford, 1982) p. 35 Google Scholar
20. Fedrizzi, L. et al, to be published.Google Scholar