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Ion Mixing During Film Deposition: Growth of Metastable Semiconducting and Metallic Alloys

Published online by Cambridge University Press:  15 February 2011

K.C. Cadien ,
M.A. Ray ,
S.M. Shin ,
J.M. Rigsbee ,
S.A. Barnett  and
J.E. Greene
K.C. Cadien
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, Ihiversity of Illinois, Urbana, Illinois, 61801
M.A. Ray
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, Ihiversity of Illinois, Urbana, Illinois, 61801
S.M. Shin
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, Ihiversity of Illinois, Urbana, Illinois, 61801
J.M. Rigsbee
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, Ihiversity of Illinois, Urbana, Illinois, 61801
S.A. Barnett
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, Ihiversity of Illinois, Urbana, Illinois, 61801
J.E. Greene
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, Ihiversity of Illinois, Urbana, Illinois, 61801
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Abstract

Epitaxial metastable (GaSb)1−Gex alloys with compositions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these unique materials was low energy ion bombardment of the growing film during deposition to promote collisional mixing and enhance adatom diffusion. Annealing experiments indicated that the metastable films exhibit good high temperature stability. While the free energy difference between the single phase metastable and two phase equilibrium states is only ∼ 20 meV/atom, the activation barrier for the transformation is ∼ 3 eV. All films were ptype with room temperature carrier concentrations and mobilities between 1016 and 1019 cm−3 and 10 and 720 cm2/V∼sec, respectively, depending on film composition. Collisional mixing due to low energy ion bombardment of the growing film was also found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing of amorphous GaSb/Ge mixtures deposited on glass at 60°C. Finally, some initial results on the deposition of metastable fcc Cu/Cr alloys are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 93
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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